DACMI160N1200 DACO Semiconductor


DACMI160N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A
Polarisation: unipolar
Pulsed drain current: 400A
Type of semiconductor module: MOSFET transistor
Power dissipation: 580W
Operating temperature: -55...150°C
Technology: SiC
Drain current: 110A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -5...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 20mΩ
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+6044.91 грн
В кошику  од. на суму  грн.
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Технічний опис DACMI160N1200 DACO Semiconductor

Category: Transistor modules, Description: Module; single transistor; 1.2kV; 110A; SOT227B; screw; Idm: 400A, Polarisation: unipolar, Pulsed drain current: 400A, Type of semiconductor module: MOSFET transistor, Power dissipation: 580W, Operating temperature: -55...150°C, Technology: SiC, Drain current: 110A, Drain-source voltage: 1.2kV, Mechanical mounting: screw, Electrical mounting: screw, Gate-source voltage: -5...20V, Semiconductor structure: single transistor, Case: SOT227B, On-state resistance: 20mΩ.