DACMI200N1200

DACMI200N1200 DACO Semiconductor


DACMI200N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A
Case: SOT227B
Operating temperature: -55...150°C
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 15mΩ
Technology: SiC
Drain current: 125A
Pulsed drain current: 500A
Drain-source voltage: 1.2kV
Power dissipation: 980W
на замовлення 6 шт:

термін постачання 14-30 дні (днів)
Кількість Ціна
1+14306.07 грн
В кошику  од. на суму  грн.
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Технічний опис DACMI200N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A, Case: SOT227B, Operating temperature: -55...150°C, Type of semiconductor module: MOSFET transistor, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: single transistor, Polarisation: unipolar, Gate-source voltage: -10...20V, On-state resistance: 15mΩ, Technology: SiC, Drain current: 125A, Pulsed drain current: 500A, Drain-source voltage: 1.2kV, Power dissipation: 980W.