DACMI200N1200 DACO Semiconductor


DACMI200N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A
Polarisation: unipolar
Pulsed drain current: 500A
Type of semiconductor module: MOSFET transistor
Power dissipation: 980W
Operating temperature: -55...150°C
Technology: SiC
Drain current: 125A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -10...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 15mΩ
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+14144.44 грн
В кошику  од. на суму  грн.
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Технічний опис DACMI200N1200 DACO Semiconductor

Category: Transistor modules, Description: Module; single transistor; 1.2kV; 125A; SOT227B; screw; Idm: 500A, Polarisation: unipolar, Pulsed drain current: 500A, Type of semiconductor module: MOSFET transistor, Power dissipation: 980W, Operating temperature: -55...150°C, Technology: SiC, Drain current: 125A, Drain-source voltage: 1.2kV, Mechanical mounting: screw, Electrical mounting: screw, Gate-source voltage: -10...20V, Semiconductor structure: single transistor, Case: SOT227B, On-state resistance: 15mΩ.