DACMI80N1200

DACMI80N1200 DACO Semiconductor


DACMI80N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Case: SOT227B
Operating temperature: -55...150°C
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 34mΩ
Technology: SiC
Drain current: 50A
Pulsed drain current: 250A
Drain-source voltage: 1.2kV
Power dissipation: 460W
на замовлення 4 шт:

термін постачання 14-30 дні (днів)
Кількість Ціна
1+4517.18 грн
3+3702.33 грн
В кошику  од. на суму  грн.
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Технічний опис DACMI80N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A, Case: SOT227B, Operating temperature: -55...150°C, Type of semiconductor module: MOSFET transistor, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: single transistor, Polarisation: unipolar, Gate-source voltage: -10...20V, On-state resistance: 34mΩ, Technology: SiC, Drain current: 50A, Pulsed drain current: 250A, Drain-source voltage: 1.2kV, Power dissipation: 460W.