DACMI80N1200

DACMI80N1200 DACO Semiconductor


DACMI80N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 50A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: 250A
Power dissipation: 460W
Technology: SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Operating temperature: -55...150°C
на замовлення 4 шт:

термін постачання 14-30 дні (днів)
Кількість Ціна
1+4543.00 грн
3+3723.89 грн
В кошику  од. на суму  грн.
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Технічний опис DACMI80N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 50A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 34mΩ, Pulsed drain current: 250A, Power dissipation: 460W, Technology: SiC, Gate-source voltage: -10...20V, Mechanical mounting: screw, Operating temperature: -55...150°C.