DACMI80N1200 DACO Semiconductor
Виробник: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A
Polarisation: unipolar
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 460W
Operating temperature: -55...150°C
Technology: SiC
Drain current: 50A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -10...20V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 34mΩ
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4610.28 грн |
| 3+ | 3778.91 грн |
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Технічний опис DACMI80N1200 DACO Semiconductor
Category: Transistor modules, Description: Module; single transistor; 1.2kV; 50A; SOT227B; screw; Idm: 250A, Polarisation: unipolar, Pulsed drain current: 250A, Type of semiconductor module: MOSFET transistor, Power dissipation: 460W, Operating temperature: -55...150°C, Technology: SiC, Drain current: 50A, Drain-source voltage: 1.2kV, Mechanical mounting: screw, Electrical mounting: screw, Gate-source voltage: -10...20V, Semiconductor structure: single transistor, Case: SOT227B, On-state resistance: 34mΩ.


