DAGNH1001200 DACO Semiconductor
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 555W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Power dissipation: 555W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
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Технічний опис DAGNH1001200 DACO Semiconductor
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Case: HW9434, Power dissipation: 555W, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, кількість в упаковці: 1 шт.
Інші пропозиції DAGNH1001200
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DAGNH1001200 | Виробник : DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: HW9434 Power dissipation: 555W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
товар відсутній |