DAGNH100600 DACO Semiconductor
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 400W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: HW9434
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 400W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
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Технічний опис DAGNH100600 DACO Semiconductor
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Case: HW9434, Technology: NPT, Topology: IGBT half-bridge, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Power dissipation: 400W, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції DAGNH100600
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DAGNH100600 | Виробник : DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: HW9434 Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Power dissipation: 400W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |