DAGNH1501200 DACO Semiconductor
Виробник: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Collector current: 150A
Power dissipation: 780W
Case: HW9434
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Collector current: 150A
Power dissipation: 780W
Case: HW9434
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
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Технічний опис DAGNH1501200 DACO Semiconductor
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Collector current: 150A, Power dissipation: 780W, Case: HW9434, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Topology: IGBT half-bridge, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції DAGNH1501200
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DAGNH1501200 | Виробник : DACO Semiconductor |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Collector current: 150A Power dissipation: 780W Case: HW9434 Gate-emitter voltage: ±20V Pulsed collector current: 300A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Topology: IGBT half-bridge Mechanical mounting: screw Type of module: IGBT |
товар відсутній |