DAMI160N200

DAMI160N200 DACO Semiconductor


DAMI160N200.pdf Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 130A; SOT227B; screw; Idm: 560A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 130A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.3mΩ
Pulsed drain current: 560A
Power dissipation: 440W
Gate-source voltage: -20...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
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Технічний опис DAMI160N200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 200V; 130A; SOT227B; screw; Idm: 560A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 200V, Drain current: 130A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 10.3mΩ, Pulsed drain current: 560A, Power dissipation: 440W, Gate-source voltage: -20...20V, Operating temperature: -55...150°C, Mechanical mounting: screw.