DAMI320N100

DAMI320N100 DACO Semiconductor


pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A08468385B548143&compId=DAMI320N100.pdf?ci_sign=a4ae9b9148fff47048d377e89df91cedb228f45a Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 280A; SOT227B; screw; Idm: 900A
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Power dissipation: 424W
Case: SOT227B
On-state resistance: 2.1mΩ
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Gate-source voltage: -20...20V
Pulsed drain current: 900A
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Технічний опис DAMI320N100 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 280A; SOT227B; screw; Idm: 900A, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 280A, Power dissipation: 424W, Case: SOT227B, On-state resistance: 2.1mΩ, Semiconductor structure: single transistor, Mechanical mounting: screw, Electrical mounting: screw, Type of semiconductor module: MOSFET transistor, Gate-source voltage: -20...20V, Pulsed drain current: 900A.