DBL206GH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 7+ | 45.85 грн |
| 50+ | 35.00 грн |
| 100+ | 25.99 грн |
| 500+ | 19.05 грн |
| 1000+ | 15.48 грн |
| 2000+ | 13.84 грн |
| 5000+ | 12.92 грн |
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Технічний опис DBL206GH Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBL, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DBL, Grade: Automotive, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 800 V, Qualification: AEC-Q101.