DBLS205GHC1G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Voltage - Peak Reverse (Max): 600 V
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Технічний опис DBLS205GHC1G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 2 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A, Current - Average Rectified (Io): 2 A, Supplier Device Package: DBLS, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Surface Mount, Package / Case: 4-SMD, Gull Wing, Packaging: Tube, Voltage - Peak Reverse (Max): 600 V.