DD1000S33HE3BOSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1000A (DC)
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис DD1000S33HE3BOSA1 Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 1000A (DC), Supplier Device Package: AG-IHVB130-3, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A, Current - Reverse Leakage @ Vr: 1000 A @ 1800 V.