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DD800S33K2CB3S2NDSA1 Infineon Technologies


DD800S33K2C_v3.0_6-17-16.pdf Виробник: Infineon Technologies
Description: MODULE DIODE IHV130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 800A (DC)
Supplier Device Package: A-IHV130-3
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A
Current - Reverse Leakage @ Vr: 1100 A @ 1800 V
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Технічний опис DD800S33K2CB3S2NDSA1 Infineon Technologies

Description: MODULE DIODE IHV130-3, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 800A (DC), Supplier Device Package: A-IHV130-3, Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 3300 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 800 A, Current - Reverse Leakage @ Vr: 1100 A @ 1800 V.