DFS400HF17I3C2 Leapers Semiconductor Co.,Ltd
Виробник: Leapers Semiconductor Co.,Ltd
Description: MOSFET 2N-CH 1700V 420A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.585kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30500pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1.022nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 2.7V @ 240mA
Description: MOSFET 2N-CH 1700V 420A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.585kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30500pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1.022nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 2.7V @ 240mA
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Технічний опис DFS400HF17I3C2 Leapers Semiconductor Co.,Ltd
Description: MOSFET 2N-CH 1700V 420A, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.585kW (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 30500pF @ 1000V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 400A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1.022nC @ 15V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 2.7V @ 240mA.