Технічний опис DG1209ETE+T Maxim
Description: LOW LEAKAGE, HIGH VOLTAGE DUEL 4, Packaging: Tape & Reel (TR), Package / Case: 16-WQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C, On-State Resistance (Max): 160Ohm, -3db Bandwidth: 250MHz, Supplier Device Package: 16-TQFN (4x4), Voltage - Supply, Dual (V±): ±5V ~ 20V, Charge Injection: 0.5pC, Crosstalk: -80dB @ 1MHz, Switch Circuit: SP4T - Open, Multiplexer/Demultiplexer Circuit: 4:1, Channel-to-Channel Matching (ΔRon): 10Ohm, Switch Time (Ton, Toff) (Max): 400ns, 400ns, Channel Capacitance (CS(off), CD(off)): 4pF, 15pF, Current - Leakage (IS(off)) (Max): 1nA, Number of Circuits: 2.
Інші пропозиції DG1209ETE+T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DG1209ETE+T | Виробник : Analog Devices Inc./Maxim Integrated |
 Description: LOW LEAKAGE, HIGH VOLTAGE DUEL 4Packaging: Tape & Reel (TR) Package / Case: 16-WQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 160Ohm -3db Bandwidth: 250MHz Supplier Device Package: 16-TQFN (4x4) Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 0.5pC Crosstalk: -80dB @ 1MHz Switch Circuit: SP4T - Open Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 400ns, 400ns Channel Capacitance (CS(off), CD(off)): 4pF, 15pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
товару немає в наявності |