DG20X06T2 STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 200ns
Turn-on time: 26ns
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.34 грн |
| 4+ | 125.48 грн |
| 10+ | 111.35 грн |
| 30+ | 100.55 грн |
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Технічний опис DG20X06T2 STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 29A; 166W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 600V, Collector current: 29A, Power dissipation: 166W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Mounting: THT, Gate charge: 0.14µC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 200ns, Turn-on time: 26ns.