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DGW30N65BTH

DGW30N65BTH Yangjie Technology


Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Gate Charge: 150 nC
Test Condition: 300V, 30A, 33Ohm, 15V
Switching Energy: 870µJ (on), 260µJ (off)
Td (on/off) @ 25°C: 37ns/113ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 187 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+175.26 грн
9000+159.41 грн
18000+150.05 грн
36000+132.03 грн
72000+118.79 грн
180000+110.00 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
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Технічний опис DGW30N65BTH Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Gate Charge: 150 nC, Test Condition: 300V, 30A, 33Ohm, 15V, Switching Energy: 870µJ (on), 260µJ (off), Td (on/off) @ 25°C: 37ns/113ns, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Reverse Recovery Time (trr): 35 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR), Power - Max: 187 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Part Status: Active.