DGW30N65BTH

DGW30N65BTH Yangjie Technology


Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/113ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 300V, 30A, 33Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
на замовлення 180000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+161.48 грн
9000+ 146.87 грн
18000+ 138.25 грн
36000+ 121.65 грн
72000+ 109.45 грн
180000+ 101.35 грн
Мінімальне замовлення: 1800
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Технічний опис DGW30N65BTH Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 37ns/113ns, Switching Energy: 870µJ (on), 260µJ (off), Test Condition: 300V, 30A, 33Ohm, 15V, Gate Charge: 150 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 187 W.