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DGW50N65CTL1

DGW50N65CTL1 Yangjie Technology


Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Part Status: Active
Gate Charge: 450 nC
Test Condition: 300V, 50A, 10Ohm, 15V
Switching Energy: 1.27mJ (on), 650µJ (off)
Td (on/off) @ 25°C: 55ns/319ns
Supplier Device Package: TO-247AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+293.30 грн
9000+266.74 грн
18000+251.04 грн
36000+220.86 грн
72000+198.76 грн
180000+184.03 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
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Технічний опис DGW50N65CTL1 Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Power - Max: 326 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 85 A, Part Status: Active, Gate Charge: 450 nC, Test Condition: 300V, 50A, 10Ohm, 15V, Switching Energy: 1.27mJ (on), 650µJ (off), Td (on/off) @ 25°C: 55ns/319ns, Supplier Device Package: TO-247AB, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, Reverse Recovery Time (trr): 100 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR).