DI002N10PWK DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 2W; QFN2X2; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 2W; QFN2X2; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Технічний опис DI002N10PWK DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 2W; QFN2X2; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 2W, Case: QFN2X2, Gate-source voltage: ±20V, On-state resistance: 0.26Ω, Mounting: SMD, Gate charge: 8.4nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.