DI048N04PT DIOTEC SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9593DF242471C0D6&compId=di048n04pt.pdf?ci_sign=55c805ac016989efe88f0c771f5387e0d3bbc210 Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 37.5W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 48.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Технічний опис DI048N04PT DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 35A, Pulsed drain current: 200A, Power dissipation: 37.5W, Case: QFN3X3, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 48.5nC, Kind of package: reel; tape, Kind of channel: enhancement.