DI048N08PQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 N 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
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Технічний опис DI048N08PQ Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 N 80V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 56.8W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel.