DI115N06PQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 72.5A
Drain-source voltage: 60V
Gate charge: 13nC
On-state resistance: 3.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 78.9W
Type of transistor: N-MOSFET
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 425.81 грн |
| 10+ | 217.39 грн |
| 17+ | 55.92 грн |
| 46+ | 52.77 грн |
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Технічний опис DI115N06PQ DIOTEC SEMICONDUCTOR
Description: DI115N06PQ, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 78.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V.
Інші пропозиції DI115N06PQ за ціною від 61.44 грн до 510.98 грн
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DI115N06PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 480A Drain current: 72.5A Drain-source voltage: 60V Gate charge: 13nC On-state resistance: 3.6mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 78.9W Type of transistor: N-MOSFET Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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DI115N06PQ | Виробник : Diotec Semiconductor |
Description: DI115N06PQ Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V |
товару немає в наявності |