DI145N04PQ-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: IC
Package / Case: 8-PowerTDFN
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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Технічний опис DI145N04PQ-AQ Diotec Semiconductor
Description: IC, Package / Case: 8-PowerTDFN, Packaging: Bulk, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.