Технічний опис DI2A2N100D1K-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 25A; 30W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 1.4A, Pulsed drain current: 25A, Power dissipation: 30W, Case: DPAK, Gate-source voltage: ±25V, On-state resistance: 6.8Ω, Mounting: SMD, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry, кількість в упаковці: 1 шт.
Інші пропозиції DI2A2N100D1K-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI2A2N100D1K-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±25V On-state resistance: 6.8Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
||
| DI2A2N100D1K-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±25V On-state resistance: 6.8Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |