Технічний опис DI2A2N80D1-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 4.5A; 54W, Case: DPAK; TO252AA, Mounting: SMD, Pulsed drain current: 4.5A, Power dissipation: 54W, Gate charge: 9.6nC, Polarisation: unipolar, Drain current: 2.2A, Kind of channel: enhancement, Drain-source voltage: 800V, Application: automotive industry, Type of transistor: N-MOSFET, On-state resistance: 4.8Ω.
Інші пропозиції DI2A2N80D1-AQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DI2A2N80D1-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 4.5A; 54W Case: DPAK; TO252AA Mounting: SMD Pulsed drain current: 4.5A Power dissipation: 54W Gate charge: 9.6nC Polarisation: unipolar Drain current: 2.2A Kind of channel: enhancement Drain-source voltage: 800V Application: automotive industry Type of transistor: N-MOSFET On-state resistance: 4.8Ω |
товару немає в наявності |
В кошику од. на суму грн. |
| DI2A2N80D1-AQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 4.5A; 54W
Case: DPAK; TO252AA
Mounting: SMD
Pulsed drain current: 4.5A
Power dissipation: 54W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 2.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 4.8Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 4.5A; 54W
Case: DPAK; TO252AA
Mounting: SMD
Pulsed drain current: 4.5A
Power dissipation: 54W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 2.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 4.8Ω
товару немає в наявності
В кошику
од. на суму грн.