Технічний опис DI2A8N03PWK2 Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 12A; 1.4W; QFN2X2, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 1.4W, Case: QFN2X2, Gate-source voltage: ±12V, On-state resistance: 0.102Ω, Mounting: SMD, Gate charge: 6.8nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.
Інші пропозиції DI2A8N03PWK2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DI2A8N03PWK2 | Виробник : DIOTEC SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 12A; 1.4W; QFN2X2 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.4W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 0.102Ω Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |