Технічний опис DI318N06PQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 318A; 280W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 318A, Power dissipation: 280W, Case: QFN5x6, On-state resistance: 1.6mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 98nC.
Інші пропозиції DI318N06PQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DI318N06PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 318A; 280W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 318A Power dissipation: 280W Case: QFN5x6 On-state resistance: 1.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC |
товару немає в наявності |
В кошику од. на суму грн. |
| DI318N06PQ |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 318A; 280W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 318A
Power dissipation: 280W
Case: QFN5x6
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 318A; 280W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 318A
Power dissipation: 280W
Case: QFN5x6
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
товару немає в наявності
В кошику
од. на суму грн.