DI4A5C06SQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DI4A5C06SQ
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 15nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 105mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 760pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Технічний опис DI4A5C06SQ Diotec Semiconductor
Description: DI4A5C06SQ, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 15nC @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 105mOhm @ 3.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 760pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.6W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.