Технічний опис DI4A5C06SQ DIOTEC SEMICONDUCTOR
Description: DI4A5C06SQ, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 760pF @ 30V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 105mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 15nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції DI4A5C06SQ
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DI4A5C06SQ | Виробник : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 760pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 105mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
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