DI7A5N65D2K DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 25A
Power dissipation: 62.5W
Case: D2PAK; TO263AB
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
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Технічний опис DI7A5N65D2K DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4.7A, Pulsed drain current: 25A, Power dissipation: 62.5W, Case: D2PAK; TO263AB, Gate-source voltage: ±30V, On-state resistance: 0.43Ω, Mounting: SMD, Gate charge: 18.4nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції DI7A5N65D2K
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DI7A5N65D2K | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 25A Power dissipation: 62.5W Case: D2PAK; TO263AB Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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