DID3A2N65

DID3A2N65 DIOTEC SEMICONDUCTOR


did3a2n65.pdf Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 16A
Power dissipation: 54W
Case: IPAK SL; TO251
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис DID3A2N65 DIOTEC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2A, Pulsed drain current: 16A, Power dissipation: 54W, Case: IPAK SL; TO251, Gate-source voltage: ±30V, On-state resistance: 2.6Ω, Mounting: THT, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.

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DID3A2N65 DID3A2N65 Виробник : DIOTEC SEMICONDUCTOR did3a2n65.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 16A
Power dissipation: 54W
Case: IPAK SL; TO251
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній