DID3A2N65 Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET IPAK N 650V 3.2A
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 581 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.36 грн |
| 75+ | 18.57 грн |
| 150+ | 16.41 грн |
| 525+ | 12.53 грн |
| 1050+ | 11.28 грн |
| 2025+ | 10.27 грн |
| 5025+ | 9.22 грн |
Відгуки про товар
Написати відгук
Технічний опис DID3A2N65 Diotec Semiconductor
Description: MOSFET IPAK N 650V 3.2A, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 581 pF @ 25 V.
Інші пропозиції DID3A2N65
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DID3A2N65 | Виробник : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W Mounting: THT Case: IPAK SL; TO251 Kind of package: reel; tape Drain current: 2A Drain-source voltage: 650V Power dissipation: 54W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 16A On-state resistance: 2.6Ω кількість в упаковці: 1 шт |
товару немає в наявності |
|
|
|
DID3A2N65 | Виробник : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 16A; 54W Mounting: THT Case: IPAK SL; TO251 Kind of package: reel; tape Drain current: 2A Drain-source voltage: 650V Power dissipation: 54W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 16A On-state resistance: 2.6Ω |
товару немає в наявності |