DMC3020UDVWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.18W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис DMC3020UDVWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.18W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V, Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V, Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) (Type UXD), Grade: Automotive, Qualification: AEC-Q101.