DMC67D8UFDBQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N/P-CH 60V/20V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW (Ta)
Drain to Source Voltage (Vdss): 60V, 20V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 7.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис DMC67D8UFDBQ-13 Diodes Incorporated
Description: MOSFET N/P-CH 60V/20V 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 580mW (Ta), Drain to Source Voltage (Vdss): 60V, 20V, Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 7.3nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.