DMN15M5UCA6-7 Diodes Incorporated

Description: MOSFET 2N-CH 12V X4-DSN2117-6, Supplier Device Package: X4-DSN2117-6, Vgs(th) (Max) @ Id: 1.3V @ 840µA, Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 4V, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), Drain to Source Voltage (Vdss): 12V, Power - Max: 1.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-XFBGA, WLCSP, Packaging: Tape & Reel (TR).