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DMN16M8UCA6-7

DMN16M8UCA6-7 Diodes Incorporated

DMN16M8UCA6.pdf Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V X3-DSN2718-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 6V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 6V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
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Технічний опис DMN16M8UCA6-7 Diodes Incorporated

Description: MOSFET 2N-CH 12V X3-DSN2718-6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 6V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 6V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: X3-DSN2718-6.