Технічний опис DMN3115UDM-7 Diodes Incorporated
Description: MOSFET N-CH 30V 3.2A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 4.5V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V.
Інші пропозиції DMN3115UDM-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMN3115UDM-7 | Виробник : Diodes Inc |
 Trans MOSFET N-CH 30V 3.2A 6-Pin SOT-26 T/R |
товару немає в наявності |
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DMN3115UDM-7 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 30V 3.2A SOT-26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V |
товару немає в наявності |