Технічний опис DMN6066SSDQ-13 Diodes Inc
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8, Polarisation: unipolar, Application: automotive industry, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET x2, Case: SO8, Gate charge: 10.3nC, On-state resistance: 97mΩ, Power dissipation: 2.14W, Drain current: 3.5A, Pulsed drain current: 17A, Gate-source voltage: ±20V, Drain-source voltage: 60V, Kind of package: 13 inch reel; tape.
Інші пропозиції DMN6066SSDQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN6066SSDQ-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V 60V SO-8 T&R 2.5K |
товару немає в наявності |
||
 |
DMN6066SSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Polarisation: unipolar Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 Gate charge: 10.3nC On-state resistance: 97mΩ Power dissipation: 2.14W Drain current: 3.5A Pulsed drain current: 17A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape |
товару немає в наявності |