DMN62D1SFBW-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Current - Continuous Drain (Id) @ 25°C: 528mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500µW (Ta)
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Технічний опис DMN62D1SFBW-7B Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V, Current - Continuous Drain (Id) @ 25°C: 528mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: U-DFN1006-3/SWP (Type UX), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 500µW (Ta).