DMN62D1SFBWQ-7B Diodes Incorporated
Виробник: Diodes IncorporatedDescription: 2N7002 FAMILY X2-DFN1006-3 T&R
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 538mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V
Qualification: AEC-Q101
на замовлення 980000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.32 грн |
| 20000+ | 2.91 грн |
| 30000+ | 2.76 грн |
| 50000+ | 2.44 грн |
| 70000+ | 2.34 грн |
| 100000+ | 2.26 грн |
| 250000+ | 2.13 грн |
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Технічний опис DMN62D1SFBWQ-7B Diodes Incorporated
Description: 2N7002 FAMILY X2-DFN1006-3 T&R, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 538mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: U-DFN1006-3/SWP (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V, Qualification: AEC-Q101.