Технічний опис DMN80H2D0SCTI Diodes Incorporated
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 4A, Pulsed drain current: 28A, Power dissipation: 16W, Case: ITO220AB, Gate-source voltage: ±30V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 35.4nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції DMN80H2D0SCTI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMN80H2D0SCTI | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 28A Power dissipation: 16W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 35.4nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| DMN80H2D0SCTI | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 28A Power dissipation: 16W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 35.4nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |