DMP1011LFVQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V POWERDI3333, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.05W, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).