DMP1018UCB9-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 7.6A U-WLB1515-9
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: U-WLB1515-9
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
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Технічний опис DMP1018UCB9-7 Diodes Incorporated
Description: MOSFET P-CH 12V 7.6A U-WLB1515-9, Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: U-WLB1515-9, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-UFBGA, WLBGA, Packaging: Tape & Reel (TR).