DMP3056LVT-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A TSOT-26
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис DMP3056LVT-13 Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A TSOT-26, Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 1.38W, Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Packaging: Tape & Reel (TR).