DMP57D5UFB-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 425mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
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Технічний опис DMP57D5UFB-7 Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 4 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 425mW (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).