Технічний опис DMT10H032LDV-13 Diodes Inc
Description: MOSFET 2N-CH 100V 18A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V, Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC), Part Status: Active.
Інші пропозиції DMT10H032LDV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT10H032LDV-13 | Виробник : DIODES INCORPORATED |
 DMT10H032LDV-13 SMD N channel transistors |
товару немає в наявності |
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DMT10H032LDV-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 100V 18A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) Part Status: Active |
товару немає в наявності |