DMT12H007SPS-13 DIODES INCORPORATED


Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
кількість в упаковці: 2500 шт
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Технічний опис DMT12H007SPS-13 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W, On-state resistance: 16mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.9W, Polarisation: unipolar, Kind of package: reel; tape, Mounting: SMD, Gate charge: 44nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: PowerDI5060-8, Pulsed drain current: 320A, Drain-source voltage: 120V, Drain current: 64A, кількість в упаковці: 2500 шт.

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DMT12H007SPS-13 Виробник : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 320A; 2.9W
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.9W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 320A
Drain-source voltage: 120V
Drain current: 64A
товар відсутній