DMT12H060LCA9-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V X4-DSN15
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Drain to Source Voltage (Vdss): 115 V
Vgs (Max): ±5.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: X2-DSN1515-9
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD, No Lead
Packaging: Bulk
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Технічний опис DMT12H060LCA9-7 Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V X4-DSN15, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Drain to Source Voltage (Vdss): 115 V, Vgs (Max): ±5.5V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: X2-DSN1515-9, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-SMD, No Lead, Packaging: Bulk.