Продукція > DIODES INCORPORATED > DMT3009LDV-13

DMT3009LDV-13 Diodes Incorporated

DMT3009LDV.pdf Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 823pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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Технічний опис DMT3009LDV-13 Diodes Incorporated

Description: IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 823pF @ 15V, Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).