Технічний опис DMT4008LFV-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 17.1nC, On-state resistance: 12mΩ, Power dissipation: 1.9W, Drain current: 9.7A, Gate-source voltage: ±20V, Drain-source voltage: 40V, Pulsed drain current: 70A, Kind of package: 13 inch reel; tape, Case: PowerDI3333-8.
Інші пропозиції DMT4008LFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT4008LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17.1nC On-state resistance: 12mΩ Power dissipation: 1.9W Drain current: 9.7A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 70A Kind of package: 13 inch reel; tape Case: PowerDI3333-8 |
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