DMT69M5LFVWQ-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
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Технічний опис DMT69M5LFVWQ-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 11.9A, Power dissipation: 2.74W, Case: PowerDI3333-8, Gate-source voltage: ±20V, On-state resistance: 12.5mΩ, Mounting: SMD, Gate charge: 28.4nC, Kind of channel: enhancement, Pulsed drain current: 160A, Kind of package: 13 inch reel; tape, Application: automotive industry.