DMTH10H1M7SPGW-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI80
Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI8080-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 405W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 352A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис DMTH10H1M7SPGW-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI80, Input Capacitance (Ciss) (Max) @ Vds: 10881 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerDI8080-5, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 405W (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 352A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: SOT-1235, Packaging: Tape & Reel (TR).