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DMTH10H4M6SPSWQ-13 DIODES INCORPORATED

Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 4.7W
Case: PowerDI5060-8
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 66nC
Application: automotive industry

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Технічний опис DMTH10H4M6SPSWQ-13 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.7W; PowerDI5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Power dissipation: 4.7W, Case: PowerDI5060-8, On-state resistance: 4.9mΩ, Mounting: SMD, Gate charge: 66nC, Application: automotive industry.